SAMSUNG 4TB 990 EVO PLUS PCIE 5.0 X2 M.2 INTERNAL SSD
QAR 1,179.00
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Description
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Interface: PCIe Gen 4×4 / Gen 5×2
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Form Factor: M.2 2280
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Sequential Read Speed: Up to 7,250 MB/s
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Sequential Write Speed: Up to 6,300 MB/s
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Endurance: 2,400 TBW
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Controller: Samsung in-house controller
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NAND Flash Memory: Samsung V-NAND TLC
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Cache Memory: HMB (Host Memory Buffer)
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Dimensions: Max 80.15 x Max 22.15 x Max 2.38 mm
Description
-
Interface: PCIe Gen 4×4 / Gen 5×2
-
Form Factor: M.2 2280
-
Sequential Read Speed: Up to 7,250 MB/s
-
Sequential Write Speed: Up to 6,300 MB/s
-
Endurance: 2,400 TBW
-
Controller: Samsung in-house controller
-
NAND Flash Memory: Samsung V-NAND TLC
-
Cache Memory: HMB (Host Memory Buffer)
-
Dimensions: Max 80.15 x Max 22.15 x Max 2.38 mm
