SAMSUNG 2TB 990 EVO PLUS PCIE 5.0 X2 M.2 INTERNAL SSD
QAR 669.00
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Description
| Feature | Specification / Notes |
|---|---|
| Interface | PCIe 4.0 ×4 or PCIe 5.0 ×2 (NVMe 2.0 compatible) |
| Sequential Read | Up to 7,250 MB/s |
| Sequential Write | Up to 6,300 MB/s |
| Random (4K, QD32) | Up to ~1,000K IOPS (read) / ~1,350K IOPS (write) |
| Endurance (TBW) | 1,200 TBW (i.e. 600 TBW per 1 TB ×2) |
| NAND / Controller | Samsung V-NAND (TLC, V8 generation) + Piccolo controller |
| Cache / DRAM | DRAM-less; uses Host Memory Buffer (HMB) + dynamic cache (TurboWrite 2.0) |
| Form Factor | M.2 2280 (single-sided) |
| Power & Thermal | More efficient than the standard 990 EVO, nickel-coated controller, thermal management built in |
Description
| Feature | Specification / Notes |
|---|---|
| Interface | PCIe 4.0 ×4 or PCIe 5.0 ×2 (NVMe 2.0 compatible) |
| Sequential Read | Up to 7,250 MB/s |
| Sequential Write | Up to 6,300 MB/s |
| Random (4K, QD32) | Up to ~1,000K IOPS (read) / ~1,350K IOPS (write) |
| Endurance (TBW) | 1,200 TBW (i.e. 600 TBW per 1 TB ×2) |
| NAND / Controller | Samsung V-NAND (TLC, V8 generation) + Piccolo controller |
| Cache / DRAM | DRAM-less; uses Host Memory Buffer (HMB) + dynamic cache (TurboWrite 2.0) |
| Form Factor | M.2 2280 (single-sided) |
| Power & Thermal | More efficient than the standard 990 EVO, nickel-coated controller, thermal management built in |
