SAMSUNG 1TB 990 EVO PLUS PCIE 5.0 X2 M.2 INTERNAL SSD
QAR 469.00
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Description
| Feature | Specification / Notes |
|---|---|
| Interface / Protocol | PCIe 4.0 ×4 or PCIe 5.0 ×2, NVMe 2.0 support |
| Sequential Read Speed | Up to ~7,150 MB/s (for 1 TB model) |
| Sequential Write Speed | Up to ~6,300 MB/s |
| Random / IOPS (4K, QD32) | For 1 TB: ~850,000 IOPS (read), ~1,350,000 IOPS (write) |
| Endurance (TBW) | 600 TBW for the 1 TB model |
| Form Factor | M.2 2280 (single-sided layout) |
| DRAM / Cache | DRAM-less; uses HMB (Host Memory Buffer) + TurboWrite 2.0 (SLC buffer) |
| Thermal & Efficiency Features | Nickel coating on controller, improved power efficiency vs 990 EVO, and firmware thermal management (Dynamic Thermal Guard) |
| Capacity Options | 1 TB, 2 TB, 4 TB |
Description
| Feature | Specification / Notes |
|---|---|
| Interface / Protocol | PCIe 4.0 ×4 or PCIe 5.0 ×2, NVMe 2.0 support |
| Sequential Read Speed | Up to ~7,150 MB/s (for 1 TB model) |
| Sequential Write Speed | Up to ~6,300 MB/s |
| Random / IOPS (4K, QD32) | For 1 TB: ~850,000 IOPS (read), ~1,350,000 IOPS (write) |
| Endurance (TBW) | 600 TBW for the 1 TB model |
| Form Factor | M.2 2280 (single-sided layout) |
| DRAM / Cache | DRAM-less; uses HMB (Host Memory Buffer) + TurboWrite 2.0 (SLC buffer) |
| Thermal & Efficiency Features | Nickel coating on controller, improved power efficiency vs 990 EVO, and firmware thermal management (Dynamic Thermal Guard) |
| Capacity Options | 1 TB, 2 TB, 4 TB |
Specification
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